smd type transistors www.kexin.com.cn 1 features up to 2a high current drives such as ic outputs and actuators available on-chip bias resistor low power consumption during drive absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -10 v collector current (dc) i c(dc) -1.0 a collector current (pulse) i c(pulse) *1 -2.0 a base current (dc) i b(dc) -0.02 a total power dissipation p t *2 2.0 w junction temperature t j 150 storage temperature t stg -55to+150 *1 pw 10ms, duty cycle 50% *2 when 0.7mm x 16cm 2 ceramic board is used. digital transistors HR1L3N electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb = -60v, i e = 0 -100 na v ce = -2.0v , i c = -0.1a 150 v ce = -2.0v , i c = -0.5a 100 v ce = -2.0v , i c = -1.0a 50 low level output voltage v ol *v in = -5.0v, i c = -0.2a -0.3 v low level input voltage v il * v ce = -5.0v, i c = -100 a -0.3 v input resistance r 1 3.29 4.7 6.11 k emitter-base resistance r 2 71013 k *pw 350 s, duty cycle 2% dc current gain h fe *
www.kexin.com.cn 2 smd type transistors electrical characteristics curves equivalent circuit HR1L3N marking marking mr
www.kexin.com.cn 3 smd type transistors HR1L3N
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